- 您现在的位置：买卖IC网 > Sheet目录510 > SI4561DY-T1-E3 (Vishay Siliconix)MOSFET N/P-CH 40V 8-SOIC
Si4561DY
Vishay Siliconix
SPECIFICATIONS T J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ. a
Max.
Unit
Dynamic
a
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
t d(on)
t r
t d(off)
N-Channel
V DD = 20 V, R L = 4 Ω
I D ? 5 A, V GEN = 10 V, R g = 1 Ω
P-Channel
V DD = - 20 V, R L = 4 Ω
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
7
11
10
15
15
36
14
20
20
30
30
60
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
t f
t d(on)
t r
t d(off)
t f
I D ? - 5 A, V GEN = - 10 V, R g = 1 Ω
N-Channel
V DD = 20 V, R L = 4 Ω
I D ? 5 A, V GEN = 4.5 V, R g = 1 Ω
P-Channel
V DD = - 20 V, R L = 4 Ω
I D ? - 5 A, V GEN = - 4.5 V, R g = 16 Ω
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
9
9
16
49
17
79
16
35
10
14
18
18
30
80
30
120
30
60
20
25
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current a
I S
I SM
T C = 25 °C
N-Ch
P-Ch
N-Ch
P-Ch
2.5
- 2.5
20
- 20
A
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
V SD
t rr
Q rr
t a
t b
I S = 1.6 A
I S = - 1.6 A
N-Channel
I F = 2 A, dI/dt = 100 A/μs, T J = 25 °C
P-Channel
I F = - 2 A, dI/dt = - 100 A/μs, T J = 25 °C
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
0.78
- 0.74
19
22
14
22
13
15
6
7
1.2
- 1.2
30
40
25
35
V
ns
nC
ns
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 69730
S09-0220-Rev. C, 09-Feb-09
www.vishay.com
3
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
SI4562DY-T1-GE3
MOSFET N/P-CH 20V 8-SOIC
SI4563DY-T1-GE3
MOSFET N/P-CH 40V 8-SOIC
SI4565ADY-T1-GE3
MOSFET N/P-CH 40V 8-SOIC
SI4567DY-T1-GE3
MOSFET N/P-CH 40V 8-SOIC
SI4622DY-T1-E3
MOSFET N-CH D-S 30V 8-SOIC
SI4632DY-T1-GE3
MOSFET N-CH 25V 8-SOIC
SI4634DY-T1-E3
MOSFET N-CH D-S 30V 8-SOIC
SI4636DY-T1-E3
MOSFET N-CH/SCHOTTKY 30V 8SOIC
相关代理商/技术参数
SI4561DY-T1-GE3
功能描述:MOSFET N/P-Ch MOSFET 40V 35/35mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI4562DY
功能描述:MOSFET 20V 7.1/6.2A 2W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI4562DY
制造商:Vishay Siliconix 功能描述:MOSFET DUAL NP SO-8
SI4562DY_06
制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N- and P-Channel 2.5-V (G-S) MOSFET
SI4562DY-E3
功能描述:MOSFET 20V 7.1/6.2A 2W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI4562DY-T1
功能描述:MOSFET 20V 7.1/6.2A 2W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI4562DY-T1-E3
功能描述:MOSFET 20V 7.1/6.2A 2W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI4562DY-T1-GE3
功能描述:MOSFET 20V 7.1/6.2A 2.0W 25/33mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
